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Power semiconductor device
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#	Item
41	2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. Add to Reading List Source URL: www.fairchildsemi.com Language: English - Date: 2015-05-03 16:04:40 Semiconductor packages 2N3906 Transistor Integrated circuits Bipolar junction transistor TO-92 Common base Biasing IC power supply pin Electronics Electrical engineering Electronic engineering
42	FOR IMMEDIATE RELEASE NoProduct Inquiries Power Device Global Marketing Sect. A Add to Reading List Source URL: www.mitsubishielectric.com Language: English - Date: 2015-02-03 21:02:20 Technology Mitsubishi companies Electronics Insulated gate bipolar transistor Power semiconductor device Mitsubishi Electric Transistor Mitsubishi Photovoltaic system Economy of Japan Power electronics Semiconductor devices
43	FOR IMMEDIATE RELEASE NoProduct Inquiries Power Semiconductor Device Dept. B Add to Reading List Source URL: www.mitsubishielectric.com Language: English - Date: 2015-02-03 21:02:26 Power electronics Semiconductor devices Insulated gate bipolar transistor Power semiconductor device Transistor Inverter Bipolar junction transistor Welding power supply Electrical engineering Electromagnetism Electronics
44	Microsoft Word - Phd defence nicolae sintamarean Add to Reading List Source URL: www.et.aau.dk Language: English Semiconductors Technology Failure Materials science Reliability engineering Survival analysis Reliability Power electronics Power semiconductor device Semiconductor devices Electronic engineering Design
45	Innovations Embedded The Next Generation of Power Conversion Systems Enabled by SiC Power Devices White Paper Add to Reading List Source URL: www.rohm.com Language: English Power electronics Semiconductor devices Power semiconductor device Insulated gate bipolar transistor MOSFET Silicon carbide Transistor Diode Thyristor Electromagnetism Electrical engineering Electronic engineering
46	High Power GaN Solutions for Next Generation Radar David Aichele Director, RFMD Power Business Unit EuMW October 2012 Add to Reading List Source URL: www.rfmd.com Language: English - Date: 2014-11-11 06:29:26 Semiconductor device fabrication Compound semiconductors Inorganic compounds Electronic design Gallium nitride Nitrides Monolithic microwave integrated circuit RF Micro Devices Gallium arsenide Chemistry Technology Electronics
47	GE Aviation Power Conversion & Control Products GE Aviation understands your need for high quality, reliable electrical systems. We are a proven Center of Excellence with design and production expertise committed to dev Add to Reading List Source URL: www.geaviation.com Language: English - Date: 2014-10-07 13:59:12 Electronic design Packaging Reliability Semiconductor device fabrication Semiconductors Inverter Power supply United States Military Standard MIL-STD-704 Electrical engineering Technology Electromagnetism
48	２ Major Research Results Priority Subjects with Limited Terms ― Development of a Supply/Demand Infrastructure for Next-Generation Electric Power Development of High-Performance SiC Power Semiconductors Add to Reading List Source URL: criepi.denken.or.jp Language: English - Date: 2013-09-18 22:26:01 Carbides Crystallographic defects Superhard materials Silicon carbide Dislocation Annealing Epitaxy Polymorphs of silicon carbide Crystal growth Chemistry Materials science Semiconductor device fabrication
49	Principal Research Results Fabrication of High Performance 4kV SiC Schottky Barrier Diode Background Silicon carbide (SiC) is a promising material for high-voltage and low-loss power semiconductor devices because of its Add to Reading List Source URL: criepi.denken.or.jp Language: English - Date: 2008-09-29 03:24:45 Semiconductor device fabrication Schottky barrier Schottky diode Diode Ohmic contact Power semiconductor device Silicon carbide Semiconductor device Chemistry Manufacturing Materials science
50	Project Subjects Low-loss Power Semiconductors Background and Objective Further electriﬁcation and the use of low-carbon power sources are essential from the viewpoint of conserving the global environment and the highl Add to Reading List Source URL: criepi.denken.or.jp Language: English - Date: 2011-11-04 00:31:49 Superhard materials Ceramic materials Abrasives Gemstones Silicon carbide Polymorphs of silicon carbide Semiconductor device fabrication Annealing Chemistry Carbides Manufacturing

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